„Advanced Semiconductor Devices” változatai közötti eltérés

A lap jelenlegi, 2020. február 6., 13:14-kori változata

Course Information

• Lecturers: János Volk (all semiconductor topics), András Halbritter (resistive switching memories, brain inspired computing), György Mihály (spintronics)
• Responsible lecturer: János Volk
• Language: English
• Schedule (2020 spring): 2 lectures/week, on Wednesday, 12:15-14:00, F3213 room
• Neptun Code: BMETE11MF52
• Credits: 3
• Prerequisite course: Introduction to Solid State Physics (it is also recommended to study Applied Solid State Physics before or in parallel)
• Exam: The grade is based on an oral exam in the exam period. At the exam the printed out lecture notes can be used, the emphasis is put on the level of understanding.

Topics

• Introduction: Short history of semiconductor devices, More-Moore, More-than-Moore, semiconductor industry, trends, prospects, overview of the course.
• Si technogies 1 - Bulk crystal and thin film deposition techniques: Crystal growth methods, physical properties, PVD (sputtering, MBE, thermal/e-beam evaporation), CVD (MO-CVD, ALD), thermal oxidation, strain in the layers, characterization methods (surface profiler, ellipsometry, 4-probe, Hall, DLTS).
• Si technogies 2 - Patterning: Photo-, EUV-, X-ray, e-beam lithography, etching (wet, dry, reactive ion) annealing, rapid thermal annealing, wire bonding, wafer bonding, 2D/3D micromachining.
• Advanced Si devices 1: MOS capacitor, accumulation/depletion/inversion, treshold voltage, defects (interface and fix charges), C-V measurement, CCD, MOS-FET.
• Advanced Si devices 2: Scaling of MOS, high-k dielectrics, Zener tunneling, leakage issue, hot carrier effects, Strained MOS (Si, Ge, SiGe), UTB-SOI, FIN Fet, tri-gate, NW transistor, prospects (ITRS).
• Advanced Si devices 3: Memory devices (SRAM, DRAM, flash), 2D semiconductor devices, power devices, Si solar cell.
• Compound semiconductors - Physics and technology: Deposition techniques, band engineering, heterojunctions (type I, II, III), band bending, p-n heterojunction, lattice mismatch, polar semiconductors, 2DEG at heterointerfaces.
• Compound semiconductor devices: Quantum well, LED (Blue, IR), laser diode, GaAS HEMT, GaN H-FET, MESFET, high frequency noise.
• Polymeric semiconductors: materials, polymer solar cell, OLED, pressure sensors, printed electronics, perovskite solar cells.
• Sensors and actuators: MEMS, physical, chemical, biological sensors, actuators, tactile sensors, robotic applications, biointerfaces, artificial nose, skin.
• Novel device platforms 1 - Spintronic devices: Giant magnetoresistance, spin valves, MRAMs, spint transfer torque, STT RAM.
• Novel device platforms 2 - Resistive switching memories: Concept of memristors, resistors with memory, electrochemical metallization cells, valence change memories, phase change memories.
• Novel computing architectures - Brain inspired computing, analog memories with tunable plasticity, in memory computing, resistive switching crossbar devices as artificial neural networks, spiking neural networks.

Literature

• Simon M. Sze, Kwok K. Ng: Physics of Semiconductor Devices
• Rainer Waser: Nanoelectronics and Information Technology: Advanced Electronic Materials and Novel Devices